Optical properties of anti-phase boundaries and Frenkel-type defect in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope

摘要

Optical properties of anti-phase boundaries (APBs) and Frenkel-pairs (FPs) in CuPt-ordered GaInP has been examined by in-situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope. We have found: 1) the decrease of the band gap energy E_g with decreasing the APB density and 2) three APB luminescence bands peaking at the photon energy of about E_g - 8, E_g - 18, and E_g - 30 meV, respectively. We have shown that the FPs on the Ga and In sublattices, generated by electron-irradiation, act as nonradiative recombination centers.