Ti/TiO_x/Ti lateral tunnel junctions for single electron transistor

摘要

A new technique for formation of tunnel junctions from Ti stripe providing junction capacitance of about 10 aF (150 nm wide stripe) has been developed. The technique is based on through oxidizing thin sites that form when Ti stripe crosses a step previously etched in the dielectric substrate. Charge transfer through the single junctions was investigated. Inelastic tunneling via electron states localized in the barrier region was found. This results in the essential nonlinearity of junction Ⅰ-Ⅴ curves to a scale of bias voltage of 2-3 mV. The single electron transistor built on such junctions demonstrates the Ⅰ-Ⅴ curves peculiarities originating from strong nonlinearity of single junctions.