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RESEARCH ON SIC/C PLASMA-FACING FUNCTIONALLY GRADED MATERIALS (FGM) IN CHINA

机译:浅析中国的SiC / C等离子体功能分级材料(FGM)

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Graphite is widely used in present Tokamak facilities as first wall material and C/C composite has been selected as one of the candidate materials of diverter used in ITER. But C-based materials have too high chemical sputtering yield at 600-1000K. and emerge irradiation enhanced sublimation at >1200K under the plasma erosion conditions, causing series contamination problem of plasma. SiC as a low Z advanced ceramic material, has a series of advantages for using as plasma-facing materials, however, it has relatively low thermal conductivity, Since 1997, the FGM design idea for making SiCVC plasma-facing FGM was proposed by the author and research on design and fabrication of SiC/C plasma-facing FGM was conducted in LSCPM with the aim to combine the excellent high temperature properties, low chemical sputtering, high erosion resistance, and low activation after irradiation of SiC with the high thermal conductivity of graphite, to reduce the thermal stress caused by the mismatch of thermal expansion coefficients on the interfaces and to prevent the cracks and failure under serious plasma erosion conditions. The evaluation of plasma-relevant performances was carried out in Southwest Institute Qf Nuclear Physics. The results of the evaluation show the good application perspective of SiC/C FGM as plasma-facing materials in fusion technology.
机译:Graphite广泛用于当前的Tokamak设施,因为第一墙材料和C / C复合材料已被选为迭代中使用的转向器的候选材料之一。但是,基于C基材料在600-1000K时具有过高的化学溅射产量。在等离子体侵蚀条件下,在> 1200K下产生辐射增强的升华,导致血浆的串联污染问题。 SiC作为低Z先进的陶瓷材料,使用与等离子体面向等离子体材料的一系列优点,然而,它具有相对较低的导热性,自1997年以来,由作者提出了制作SiCVC等离子体FGM的FGM设计理念和上的设计和制造的研究的SiC / C等离子体面对FGM在LSCPM进行,目的是具有高热导率的SiC的照射后的优良的高温性能,低化学溅射,高的耐侵蚀性,以及低活化结合石墨,减少由界面上的热膨胀系数不匹配引起的热应力,并在严重的等离子体腐蚀条件下防止裂缝和失败。在西南学院QF核物理学中进行了对等离子体相关性能的评估。评价结果表明SiC / C FGM作为融合技术中等离子体材料的良好应用视角。

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