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Photoemission spectroscopy study of the interface formation in organic thin film transistors

机译:有机薄膜晶体管界面形成的光学激光光谱研究

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Pentacene, perylene, and sexithiophene are all materials being used in organic thin film transistors due to their relatively large mobilities. It has been suggested that the functional behavior in these devices occurs within the first few molecular layers of the organic at the interfaces between the organic and the dielectrics used in fabrication of the thin film transistors. This makes understanding the electronic behavior of the interfaces involved in these devices critical. In order to better understand these interfaces we investigated the interface formation using photoemission spectroscopy to examine layer by layer growth of pentacene, perylene, and sexithiophene on conductors, dielectrics, and charge transfer agents and in some cases vice versa. We observed indications of dipole formation at the interfaces between the metals and organics for organic on metal deposition. These appears to be a linear relation between the interface dipole and metal workfunction with the observed dipoles ranging from a 1 eV dipole at the interface between sexithiophene and gold to a -0.46 eV dipole at the interface between pentacene and calcium. We also observed that more complex material intermixing takes place during metal on organic deposition than during organic deposition onto metal and as result, the electronic structure of the interface differs from that of organic on metal deposition. Possible charge transfer, dipole formation and energy level bending at these interfaces will be discussed.
机译:并五苯,二萘嵌苯,六噻吩并在有机薄膜晶体管中使用的所有材料,由于其相对大的迁移率。已经建议,这些装置中的功能行为的有机的在有机和在薄膜晶体管的制造中所使用电介质之间的界面的前几个分子层内发生。这使得理解参与这些设备的关键接口的电子行为。为了更好地理解这些接口我们调查使用光电子能谱来检查由导体,电介质,和电荷转移剂和在某些情况下反之亦然并五苯,二萘嵌苯,六噻吩和层生长层的界面形成。我们在金属和有机物为有机金属沉积之间的界面观察到偶极形成的迹象。这些似乎是界面偶极子和金属功函数与观察到偶极子范围从在至-0.46 eV的偶极在并五苯和钙之间的界面六噻吩和金之间的界面为1eV偶极之间的线性关系。我们还观察到更复杂的材料混合比有机沉积过程中发生的上有机金属沉积过程中在金属和作为结果,接口不同的从该有机电子结构上的金属沉积。可能的电荷转移,偶极形成和能量水平在这些界面处弯曲将被讨论。

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