Substrate Current in Surface-Potential-Based Compact MOSFET Models

摘要

A simple and accurate model of substrate current caused by impact ionization is developed in a form suitable for inclusion in the surface-potential-based compact MOSFET models. A single expression based on the surface potential difference along the MOSFET channel is applicable to all regions of operation and has correct asymptotic behavior. The new model is verified by comparison with experimental data.