Primary Consideration on Compact Modeling of DG MOSFETs with Four-terminal Operation Mode

摘要

Primary consideration for constructing a compact model of double-gate (DG) MOSFETs is discussed. The four-terminal operation mode with the independent front and back gate is considered. The modeled device is a fully-depleted (FD) DG MOSFET with practical silicon channel thickness ranging from 20nm down to 3nm. Two surface channels are inevitably not symmetrical each other. The nature of asymmetry, i.e. the number of active surface channels and the current partition between these two channels, dynamically changes during the circuit operation. As a start point, we consider the double charge-sheet model, where carrier density of two charge-sheets is calculated supposing the current which traverses between them is zero. Accommodation of carrier velocity saturation is also considered.