A Surface-Potential-Based Extrinsic Compact MOSFET Model

摘要

This work presents the extrinsic part of a recently developed advanced surface-potential-based compact MOSFET model (SP). At present it includes a novel engineering gate current model, a substrate current model valid in all regions of operation, a physics-based overlap charge model and noise sources. The extrinsic model is developed in a modular form and takes full advantages of the surface-potential-based formulation of SP. It is partially based on the newly developed simplified analytical approximation for the surface potential in the source and drain overlap regions.