Evaluation of the plasmaless gaseous etching process

摘要

We evaluated the plasmaless gaseous etching process and found that by using the COR, we could reduce the etch rate of the CVD oxide more than when using the conventional wet etching process. We consider these phenomena can be attributed to the etching mechanism of the COR that is quite different from that of wet etching. Furthermore, our results revealed that the STI shape was improved by substituting the COR for the conventional wet etching process. We believe that this technology will be a promising etching technique for advanced devices.