Growth of non-polar a-plane Ⅲ-nitride thin films on Si(100) using non-polar plane buffer layer

摘要

A non-polar (1120) GaN thin film has been grown on Si(100) substrate for the first time with inserting a non-polar plane AlN/MnS buffer layer using two growth techniques; metalorganic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). An a-plane GaN film is not accompanied with the polarization problem along the c-axis growth direction. By cathodoluminescence measurements, the band-edge emission from the GaN film prepared by MOCVD was obtained at 370.4 nm (= 3.347 eV) at room temperature. A broad yellow luminescence emission related to deep level was also observed.