We report high breakdown voltage AlGaN/GaN HEMTs using the field plate (FP) technique and demonstration of very high current density switching under high applying voltage condition. The fabricated FP-HEMT exhibited the high breakdown voltage of 594 V and achieved the high current density of 850 A/cm~2 under the high supplied voltage of 300 V. This switching current density was ten times larger than that of Si power MOSFETs.
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机译：我们使用现场板（FP）技术报告高击穿电压ALGAN / GAN HEMT，并在高施加电压条件下演示非常高的电流密度切换。制造的FP-HEMT显示出594 V的高击穿电压，并且在高供应电压为300V的高提供电压下实现了850a / cm〜2的高电流密度。该开关电流密度大于Si功率MOSFET的十倍。
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