Free-standing HVPE-GaN Layers

摘要

We have grown GaN layers with a thickness up to 340 μm in an rf-heated vertical HVPE reactor with a bottom-fed design. The GaN layers were separated from the sapphire substrate by a LLO process. The free-standing GaN was investigated by HRXRD, AFM and low temperature CL. The FWHM values of the ω-scans are 96 and 129 arcsec for the (104) and (002) reflection, respectively, which indicates high crystalline quality. The c and a lattice parameters are determined as c = 0.51850 +- 0.00004 nm and a = 0.31890 +- 0.00004 nm, indicating stress free material. The etch pit density was estimated to be 1 x 10~7 cm~(-2). The used HVPE growth procedure together with the subsequent LLO are obviously capable to provide high-quality free-standing GaN material for further epitaxial overgrowth.