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ON PRODUCTION OF NANOCRYSTALLINE TERNARY NITRIDE COATINGS VIA MAGNETRON SPUTTERING

机译:通过磁控溅射生产纳米晶三元氮化物涂层

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Magnetron sputtering was employed to produce high performance nanocrystalline ternary (Ti,Al)N coatings. Two important deposition parameters, namely the nitrogen deposition pressure and the substrate bias voltage, which affect the energies of the depositing atoms and molecules approaching the substrate, were used as the controlling variables in the process. Nanocrystalline structures were found to develop at an optimum bias condition with low deposition pressures. With increasing substrate bias voltage, the compositions of the coatings were almost unchanged but refinement of the coating structure occurred. Densified coatings with a nanograin size of 90 nm developed at a bias voltage of-100 V. With further increase of the bias voltage, a coarser coating structure developed. On the other hand, an increase in the nitrogen deposition pressure also affected the formation of the nanocrystalline coatings. As the nitrogen pressure was increased beyond 0.4 mTorr, coarser coating structures were formed, thus restricting the production of the nanocrystalline coatings at higher nitrogen pressures. The nanocrystalline nitride coatings generally contained a densified structure with improved surface roughness and properties. Microhardness measurements conducted at low loads showed that the nanocrystalline coatings generally had much higher hardness.
机译:使用磁控溅射来生产高性能纳米晶三元(Ti,Al)N涂层。使用两个重要的沉积参数,即影响沉积压力和衬底偏置电压,从而用作该过程中的控制变量的沉积原子和分子的能量。发现纳米晶结构以低沉积压力的最佳偏置条件开发。随着基板偏置电压的增加,涂层的组成几乎不变但发生了涂层结构的细化。致密化涂层,纳米尺寸为90nm,在偏置电压为100V的偏置电压下开发。随着偏置电压的进一步增加,开发了较大的涂层结构。另一方面,氮沉积压力的增加也影响了纳米晶涂层的形成。随着氮气压力的增加超过0.4毫托,形成较粗涂层结构,从而限制在较高的氮气压力下产生纳米晶涂层的产生。纳米晶氮化物涂层通常含有致密结构,具有改善的表面粗糙度和性能。在低负荷下进行的显微硬度测量显示纳米晶涂层通常具有更高的硬度。

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