Low-Temperature Fast Growth of Polycrystalline Silicon Thin Film from SiCl4 Light-Diluted Hydrogen by PECVD

摘要

The polycrystalline silicon films deposited at a high deposition rate over 3.5Aring/S along with a crystalline fraction of 80% have been obtained using decomposing SiCl₄ gas lightly diluted in hydrogen under low temperature of 200-300 by plasma enhanced chemical vapor deposition technique. The deposition rate and the crystalline fraction strongly depend not only on the if power, but also on the hydrogen dilution ratio. It is found that the higher growth rate crystalline fraction can be achieved using light-hydrogen dilution in contrast to SiH₄/H₂ gases and through the enhancement of the gas-phase reaction in SiCl₄/H₂ plasma by the optimum radio frequency power