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Direct laser marking on ROM media for identification

机译:ROM媒体上的直接激光标记用于识别

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In order to attempt the direct laser marking for ROM media like a compact disk for identification, various laser heating was carried out against a thin metallic film in the transparent medium. As heat sources for the processing, a semiconductor laser excitation YAG laser (532 nm wavelength of second harmonic, max 150 mW), semiconductor lasers (780 nm, up to 2 W), and an Ar ion laser (514.5 nm, max 2000 mW), etc. were used. The media under consideration on laser marking is an aluminum thin film reflector layer, which was sandwiched between a polycarbonate (PC) of 1.2 mm and a protection film of 5 μm thickness. The aluminum thin film (Al) is 100 nm in thickness. The obtained laser marking sizes were less than 1 μm and were evaluated using SEM and AFM. The observation samples inside a transparency resin were obtained by tearing off a protection film, and the surfaces of the bared PC and protection film were examined. The surface conditions and cross sections of laser-marking area were observed. It seems that the heated aluminum thin film were melted and a hole arose. Then a cavity was not observed from SEM cross-section observation in the marking area. It became clear that the holes were filled with PC by SEM and AFM observation. These results indicate the possibility of heat localization at the Al-PC interface and also significant heat penetration into the PC substrate itself.
机译:为了尝试将ROM介质的直接激光标记如紧凑件识别,在透明介质中的薄金属膜上进行各种激光加热。作为处理的热源,半导体激光激发yag激光器(第二谐波,最大150mW的532nm波长,最多150 mw),半导体激光器(最多2次,最多2次,514.5 nm,最大2000 mw使用等。在激光标记上考虑的介质是铝薄膜反射层,其夹在1.2mm的聚碳酸酯(PC)和5μm厚度的保护膜之间。铝薄膜(Al)厚度为100nm。所获得的激光标记尺寸小于1μm,并使用SEM和AFM评估。通过撕掉保护膜获得透明度树脂内的观察样品,检查辐射的PC和保护膜的表面。观察到激光标记区域的表面条件和横截面。似乎加热的铝薄膜熔化并出现孔。然后从标记区域的SEM横截面观察未观察到腔。很明显,通过SEM和AFM观察,孔充满了PC。这些结果表明在Al-PC接口处热定位的可能性以及对PC基板本身的显着热渗透。

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