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Preparation and Electrical-conductive Property of SnO_2- based Ceramics with 0.5 CuO and Sb_2O_3

机译:基于SnO_2的陶瓷的制备和导电性能,0.5%CuO和Sb_2O_3

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In this study, SnO_2-based ceramics, with 0.5%CuO as sintering aid and Sb_2O_3 as activator of the electrical conductivity, was obtained by pressureless sintering at 1450°C for 5 h. Densification behavior and microstructure development strongly depend on Sb_2O_3. The characteristization of microstructures on Sb_2O_3 concentrations are analyzed by SEM. A small amount of CuO improves densification; Sb_2O_3 retards the densification of SnO_2-based ceramic. The electrical resistivities of SnO_2-based ceramics with different contents of Sb_2O_3 are measured by the standard four probe method and varied in a wide range. The electrical resistivity arrives the minimal value of 4.964×10~(-2) Ω·cm for 99%SnO_2+0.5%CuO +0.5%Sb_2O_3. More content of Sb_2O_3 than that of CuO causes the degression of density and the increasing of electrical resistivity of ceramics.
机译:在该研究中,通过在1450℃下的无压烧结5小时,获得SnO_2基陶瓷作为烧结助剂和Sb_2O_3作为导电率的活化剂,得到5小时。致密化行为和微观结构发展强烈依赖于SB_2O_3。通过SEM分析SB_2O_3浓度上微结构的特征。少量CUO改善了致密化; SB_2O_3延迟了基于SNO_2的陶瓷的致密化。通过标准的四个探针方法测量具有不同含量的SB_2O_3的基于SNO_2的陶瓷的电阻率,并在宽范围内变化。电阻率到达最小值4.964×10〜(-2)Ω·cm,99%SnO_2 + 0.5%CuO + 0.5%SB_2O_3。更多的SB_2O_3含量比CUO的内容导致密度的退投和陶瓷电阻率的增加。

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