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ELECTRON CORRELATIONS IN DISORDERED ALLOYS AND AT METALLIC SURFACES

机译:无序合金中的电子相关性和金属表面

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The density functional theory (DFT) supplemented by the local density approximation (LDA) or generalized gradient approximation (GGA) in which the electron-correlation part is treated on the basis of the electron gas model is a highly reliable method for evaluation of the ground state properties of molecules and solids. However, the DFT fails in some cases, e.g., for excitation spectra of solids or in the evaluation of the gap in insulators and semiconductors and also for solids (such as lanthanides and actinides or transition-metal oxides) whose electronic structure is better described in terms of atomic-like electronic states rather than in terms of the electron gas model on which the LDA and GGA are based. The electronic properties of strongly correlated materials which cannot be adequately described within the DFT are usually studied in the framework of simplified models like, e.g., the single-band Hubbard model. The strength of correlation effects is usually classified in terms of the ratio of the on-site Coulomb energy U to the bandwidth w. One can distinguish three regimes, namely, (ⅰ) the weak interaction case (U/w < 1, transition metals), (ⅱ) the intermediate interaction case (U/w ≈ 1, metal-insulator transition regime and Kondo systems), and (ⅲ) the strong interaction case (U/w > 1, rare-earth systems and wide gap solids). It should be mentioned that a general approach bridging all the above cases is still missing even at the model level. Recently some progress has been made in extending the validity of the DFT, for example the time-dependent LDA can yield the excitation energies, and proper account of the self-interaction corrections (SIC) lead to a remarkable improvement for rare-earths. The so-called GW approximation (GWA) was successfully applied to the gap problem in a number of semiconductors and insulators as well as to studies of photoemission spectra of metallic systems. An alternative approach to the gap problem which is based on a straightforward generalization of the LDA is the LDA+U method which also yielded band narrowing in the photoemission spectra of nickel, but it failed to produce the well-known satellite structure below the main peak. The presence of the satellite in Ni was successfully explained in the framework of the T-matrix formalism developed on ab initio level (cf. Ref. 10). Another approach to the satellite and the band narrowing in nickel is based on a three-body scattering approximation that employs the Faddeev equations. The dynamical mean-field theory (DMFT) aims at accurate solution of the correlation problem on a single site which is coupled to the rest of the lattice in a selfconsistent way. The DMFT, besides many studies on the model level, was also applied to realistic calculations of correlated systems, e.g., δ-Pu.
机译:补充由局部密度近似(LDA)或广义梯度近似(GGA)补充的密度函数理论(DFT),其中基于电子气体模型处理电子相关部件是评估地面的高度可靠的方法分子和固体的状态性质。然而,DFT在某些情况下失败,例如,对于固体的激发光谱或在绝缘体和半导体中的间隙中的评估中,以及用于固体(例如镧系元素和散曲剂或过渡金属氧化物),其电子结构更好地描述原子样电子状态的条款而不是在LDA和GGA所基于的电子气模型方面。在DFT内不能充分描述的强相关材料的电子性质通常在简化模型的框架中研究,例如,例如单频带隆巴德模型。相关效果的强度通常根据现场与带宽W的ublomb能量的比率进行分类。一个可以区分三个制度,即(Ⅰ)弱相互作用案例(U / W <1,过渡金属),(Ⅱ)中间相互作用案例(U /W≈1,金属绝缘体转换制度和Kondo系统), (Ⅲ)强相互作用案例(U / W> 1,稀土系统和宽间隙固体)。应该提到的是,即使在模型级别也仍然缺少所有上述情况的一般方法仍然缺失。最近,在扩展DFT的有效性方面已经取得了一些进展,例如时间依赖的LDA可以产生激励能量,并且对自相互作用校正(SIC)的正确陈述导致稀土的显着改善。所谓的GW近似(GWA)被成功应用于许多半导体和绝缘体中的间隙问题以及研究金属系统的光电谱。基于LDA的直接概括的差距问题的替代方法是LDA + U方法,其在镍的光曝光光谱中也产生了狭窄的频段,但它未能在主峰以下产生众所周知的卫星结构。在AB初始级别(参见Ref.10)的T型基质形式主义的框架中成功地解释了Ni中卫星的存在。卫星和镍中狭窄的另一种方法基于采用Faddeev方程的三体散射近似。动态平均场理论(DMFT)旨在精确解决单个位点上的相关问题,以自信方式耦合到晶格的其余部分。除了许多关于模型水平的研究之外的DMFT也应用于相关系统的现实计算,例如Δ-PU。

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