Recent trends in scanning tunneling microscopy and spectroscopy

摘要

In 1982, G.Binnig and H.Rohrer invented the scanning tunneling microscope (STM) which rapidly become a powerful tool for exploring the electrical properties of semiconducting and metallic surfaces in addition to nanoscale objects deposited on these surfaces. After a brief introduction to the operation of an STM, a small insight is given about the true question of what is exactly measured in an STM experiment. The most simple approach is that of Tersoff and Hamann who relate the tunneling conductance to the electronic local density of states at the surface of the sample. This local density of states consists of a true spectroscopy on the atomic nanometer scale (STS)