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An Evaluation of Wafer Bumping Stencils Based on Solder Transfer Ratios and Predicted Bump Height

机译:基于焊料转移比和预测凸块高度的晶圆凸块模板评估

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In order to better characterize the performance of wafer bumping stencils, a novel solder transfer ratio has been defined that relates the amount of solder paste volume transferred to a wafer to the actual stencil aperture volume. This transfer ratio is a function of how fully an aperture fills with solder paste during the printing process, as well as how much paste is in turn released to the wafer. Knowing how the solder transfer ratio varies enables stencil designs that better achieve target bump heights with less bump height variation. Toward this end, an experimental technique has been developed that is used to measure solder transfer ratios. The technique is based on measuring the mass of transferred solder paste, and converting that mass to a transfer ratio based on the known aperture volume. Ratios have then been measured for different stencil designs (flip chip versus CSP) and stencil types (laser cut versus nickel plate-up), as well as for different solder alloys (leaded versus lead free) and solder deposition techniques (squeegee blade versus enclosed print head). These transfer ratios, along with the corresponding stencil dimensions, are then fed into a solder bump height model. As the correlation of predicted to measured bump height is very strong, so to is the concept of the solder transfer ratio. Further, a correlation of measured solder paste mass to measured bump height is generated to show how target bump height and bump height variation can be controlled and monitored prior to reflowing a printed wafer.
机译:为了更好地表征晶片凸块模板的性能,已经定义了一种新的焊料转移比,其将转移到晶片的焊膏体积的量与实际的模版孔径体积相关联。该转移比是在印刷过程中焊接焊膏的完全充分填充焊膏的函数,以及焊接到晶片的焊料有多少。了解焊料转移率如何变化使模板设计能够更好地实现具有较少凸块高度变化的目标凸块高度。朝向此结束,开发了一种用于测量焊料转移比的实验技术。该技术基于测量转移焊膏的质量,并基于已知的孔体积将该质量转换为转移比。比已然后测量了不同模板设计(倒装芯片与CSP)和模版类型(激光切割与镍板时),以及对于不同的焊料合金(含铅与无铅)和焊料沉积技术(刮刀与封闭打印头)。然后将这些传送比以及相应的模版尺寸一起加入焊料凸块高度模型中。随着预测测量的凸块高度的相关性非常强,因此是焊料转移比的概念。此外,产生测量的焊膏质量与测量的凸块高度的相关性以在回流印刷的晶片之前可以控制和监测目标凸块高度和凸块高度变化。

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