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Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self-assembled quantum dots

机译:异常量子在垂直耦合的INAS / GAAs自组装量子点中受到垂直耦合INAS / GA的缺点效应

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In vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs), the interband transition energy is predicted to exhibit a strong non-parabolic dependence on the electric field, which is not encountered in single SAD structures. An eight-band strain-dependent k·p Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.
机译:在垂直堆叠和耦合的INAS / GaAs自组装量子点(SAD)中,预测间带式转变能量在单个悲伤的结构中不遇到的电场上表现出强的非抛物线依赖性。八带应变依赖性k·p hamiltonian表明该异常量子被限制的缺点效应是由三维应变场分布引起的,这使得孔状态在堆叠的悲伤结构中的孔状态影响。

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