Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures

摘要

We have achieved electrical spin injection from both a ferromagnetic metal and a ferromagnetic semimetal into a semiconductor at room temperature. The injection mechanism is explained in terms of a tunneling process through a Schottky barrier. In this paper we summarize our results to control the atomic arrangement at the ferromagnet/semiconductor interface during molecular beam epitaxy for efficient spin injection.