Monolithic integration of In/sub 0.53/Ga/sub 0.47/As photodiodes and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on GaAs substrates for long wavelength OEIC applications

摘要

Metamorphic long wavelength double heterojunction photodiodes with In/sub 0.53/Ga/sub 0.47/As photo-absorption layer and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As metamorphic HEMTs were realized on the same GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics and the performance of HEMTs beneath the photodiode layers were also comparable to those fabricated on HEMT-only heterostructures.