RADIATION RESPONSE ANALYSIS OF TRIPLE JUNCTION InGaP/InGaAs/Ge SOLAR CELLS

摘要

A radiation study of dual and triple junction InGaP/InGaAs/Ge devices incorporating various stoichiometric combinations and internal junction structures has been performed. In particular, triple junction solar cells with an In_(0.49)Ga_(0.51)P top, an In_xGa_(1-x)As middle, and a Ge bottom junction with 0.01