Influence of cap layer on interdiffusion in InP/InGaAs quantum wells

摘要

Quantum well interdiffusion has recently attracted great attention for its suitability in the integration of optoelectronic and photonic devices, since bandgap tuning is a much simpler and more versatile fabrication process compared to the regrowth methods. Among the methods used to achieve interdiffusion are laser induced annealing, impurity free vacancy disordering, and ion implantation induced interdiffusion. The lattice matched InGaAs/InP system is of interest because of its use in optoelectronic devices for communications at the 1.3 and 1.55μm wavelengths. Recent work has focused on the effect of cap layer implantation, but thus far a comparison between different types of capping layers, and their effect on the degree of interdiffusion as a function of implant dose, has not been made. Additionally, we report the effect of the sample temperature during implantation on the evolution of the interdiffusion with dose.