Development of a spatially selective, high resolution quantum well intermixing (HRQWI) method based on low energy ion implantation

摘要

It has been demonstrated that quantum wire and quantum dot semiconductor heterostructures exhibit highly attractive characteristics thanks to their specific density of states. Laser devices fabricated on such structures are expected to have extremely low threshold current densities, very low emission wavelength drift with temperature, and high spectral purity. Several methods have been studied for the realization of 1D or 0D structures for photonic device fabrication. A lot of interesting results have been obtained using self assembled growth techniques using InAs/GaAs heterostructures 1, which do not require nanolithography. However, self assembled techniques offer only a partial control of quantum structure spatial localization and size. Up to now, results obtained with these techniques did not reach theoretical expectations, and most of the material systems used so far do not allow operation around 1.55μm.