Plasma hydrogenation of a buried trap layer in silicon: formation of a platelet layer

摘要

We observe hydrogen platelets buildup into single crystalline silicon caused by RF plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before the plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.