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Role of Shallow Electron Traps in the Fast Transient Optical Phenomena of Alkali Halide Crystals

机译:浅电子陷阱在碱卤化物晶体快速瞬态光学现象中的作用

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We present additional evidences that the same shallow electron traps-atomic alkali impurity centres [M~+]_c~0e~- are responsible for both classes (A and B) of the transient IR-absorption bands: (A) bands with maximum at 0.27― 0.36 eV in NaCl, KC1, KBr, KI and RbCl (due to "shallow electron traps" or "bound polarons") and (B) bands with maximum at 0.15― 0.36 eV in NaI, NaBr, NaCl:I, KC1:I, KBr:I, RbCl:I and RbBr:I (due to "on-centre STE" or "on-centre STE localised at iodine dimer"). Both classes of the IR bands have the same location, similar shape (both exactly coincide for KC1:I and KC1 at 10 or 80 K), half-width, vibration structure. It is established that the same Mollwo-Ivey plot curves E_0=a/d~n (d is the nn anion-cation distance, n is the exponent, a is the constant) take place for both IR band classes, if we plot instead of the IR band peak energy values the more definite values of the IR band zero-phonon line energy E_0 (for NaCl, KC1, KBr, RbCl and KC1:I) and/or the IR band low-energy edge E_0 (+-0.03 eV) values (for NaBr, NaI, NaCl:I, KBr:I, RbCl:I and RbBr:I). Two types of the [M~+]_c~0e~- centres are predominant: (ⅰ) [Na~+]_c~0e~- in KX and RbX host crystals, for which the relation E_0≈6.15/d~(2.74) is valid, and (ⅱ) [Li~+]_c~0e~- in NaX host crystals for which the relation E_0≈29.4/d~(4.72) is valid. The Mollwo-Ivey relation E_0≈18.36/d~(2.70) is valid as well for the F' band in NaCl, KC1, KBr, KI, RbCl, RbI, if we use the F' centre optical binding energy E_0 values. Under irradiation at 77 or 4.2 K the shallow trapped electron centres ([M~+]_c~0e~- and F' centres) and their associations with the V_k-type centres, i.e., dipolar pairs {[M~+]_c~0e~-...V_k} and {F'...V_k} are created. Such a "quasi-molecular electronic transients" have a very wide lifetime spectrum (τ≥1 ns) and can play a great role in the intense pulse excitation experiments.
机译:我们提出了额外的证据,即相同的浅电子疏水阀 - 原子碱杂质中心[m〜+] _ c〜0e〜 - 负责瞬态IR吸收带的等级(A和B):(a)频段最大在NaI1,KC1,KBR,Ki和RBCL中的0.27- 0.36eV​​(由于“浅电子捕集器”或“结合极性”)和(B)在Nai,Nabr,NaCl:I,KC1中最大为0.15-0.36eV​​的条带:I,KBR:I,RBCL:I和RBBR:I(由于“中心STE”或“中心STE定位在碘二聚体”)。两个类的IR带具有相同的位置,类似的形状(适用于KC1:I和KC1,在10或80 k),半宽,振动结构。建立了相同的Mollwo-Ive绘图曲线e_0 = a / d〜n(d是nn阴离子阳离子距离,n是指数,a是常数,如果我们绘制的话IR频带峰值能量值IR频带零位线能量E_0的更明确的值(对于NACL,KC1,KBR,RBCL和KC1:I)和/或IR频带低能量边缘E_0(+ -0.03 EV)值(对于Nabr,Nai,NaCl:I,KBr:I,RBCL:I和RBBR:i)。两种类型的[m〜+] _ c〜0e〜中心是主要的:(Ⅰ)[na〜+] _c〜0e〜0e〜0e〜 - 在kx和rbx主机晶体中,关系e_0≈115/ d〜(2.74 )是有效的,(Ⅱ)[Li〜+] _ C〜0e〜 - 在NAX宿主晶体中,关系e_0≈29.4/ d〜(4.72)有效。 Mollwo-Ivey关系E_0≈18.36/ d〜(2.70)在Nacl,KC1,KBR,Ki,RBCL,RBI中的F'频段是有效的,如果我们使用F'中心光学绑定能量E_0值。在77或4.2K的照射下,浅捕获的电子中心([m〜+] _ c〜0e〜 - 和f'centers)及其与V_k型中心的关联,即Dipolar对{[m〜+] _ c〜创建0e〜-... v_k}和{f'... v_k}。这种“准分子电子瞬变”具有非常宽的寿命(τ≥1ns),并且可以在强烈的脉冲激发实验中起着很大的作用。

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