Mechanical Properties of InAs/InP and InAs(S,Sn)/InP Semiconductor Alloys

摘要

In this paper, the microindentation studies have been reported for InAs/InP and InAs(S,Sn)/InP semiconductors alloys grown by MOVPE techniques. It is found that the microhardness value increases with increase of applied load and attains a constant value for further increase in the load. The mechanical properties like, fracture toughness, brittleness index, fracture surface energy and indentation size effect coefficient have also been determined using the microhardness value. The indented sample is etched in H_2SO_4:H_2O_2:H_2O in the ratio of (1:1:1) for 30 seconds. This reveals the dislocation rosette patterns generated around the edges of the indentation regions while spherical etch pits are produced on the surface of the sample. The results are discussed in detail.