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Development and TCR Control of Nichrome Thin Film Resistors for GaAs MMICs

机译:高分形式薄膜电阻器的开发与TCR控制GaAs MMICS

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Process for Nichrome resistor fabrication has been developed that gives nichrome resistors with sheet resistance Rs 40Ω/□. The alloy composition used is 80wt% Ni and 20wt% Cr. RF sputter deposition conditions, optimum for Nichrome thin film deposition with repeatable values of resistivity are reported. Comparison of results with split and normal mode of sputter deposition is also reported. The alloy composition of the deposited film is seen to depend on the purity of the sputter gas. The present deposition conditions give as-deposited NiCr films with resistivity 130μΩ-cm and TCR 85-100ppm/°C. The film resistivity and TCR are strong functions of heat cycles in the fabrication process. When subjected to heat cycles of resistor fabrication process, the film resistivity is found to drop to 104 ± 8 μΩ-cm with a rise in TCR values to 250ppm/°C.
机译:已经开发了镍铬物电阻器制造的方法,其为薄层电阻为40Ω/□提供了耐薄层电阻器。所用的合金组合物为80wt%Ni和20wt%Cr。报道了RF溅射沉积条件,具有具有可重复电阻率值的镍络薄膜沉积的最佳值。还报道了溅射沉积分裂和正常模式的结果的比较。看到沉积膜的合金组成依赖于溅射气体的纯度。本沉积条件具有沉积的NiCR膜,其电阻率130μΩ-cm和TCR 85-100ppm /℃。薄膜电阻率和TCR是制造过程中的热循环的强大功能。当经过电阻器制造过程的热循环时,发现薄膜电阻率降至104±8μΩ-cm,其升高到250ppm /°C。

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