Preparation and Characterization of Copper(II) Oxide Thin Film by Chemical Spray

摘要

Cupric oxide thin films on glass substrate have been prepared by a chemical spray technique using CuCl_2, 2H_2O. X-ray diffraction studies reveal a fine grain polycrystalline structure of the films. Dc electrical conductivity and thermoelectric power has been measured at room temperature and also at elevated temperatures. Hall effect studies show that the films are p-type semiconductors with a low value of the Hall mobility, and have carrier concentration ～10~(15) to ～10~(16) cm~(-3). Variation of the film thickness in a limited range does not have any marked effect on the optical band gap, but the position of the Fermi level is found to depend on the film thickness. In addition to lattice phonon scattering hopping conduction mechanism have been predicted as to have a dominant role in the carrier transport process in these films.