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Influence of substrate temperature on the achievement of Ti-Ni-Zr quasicrystalline films grown by pulsed laser deposition

机译:衬底温度对脉冲激光沉积生长的Ti-Ni-Zr拟晶膜的成果的影响

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Pulsed laser deposition has been used to prepare films in the Ti-Ni-Zr system. Morphology and structure of the obtained films have been studied as a function of substrate temperature being in the range 25-350 °C. Morphological and structural modifications have been followed by grazing incidence and θ - 2θ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analysed by electron probe micro-analysis. The in-depth variation of composition has been studied by secondary neutral mass spectroscopy. This study leads to the determination of the best growth temperature giving rise to the known quasicrystalline phase recently discovered in the Ti-Ni-Zr ternary system.
机译:脉冲激光沉积已用于制备Ti-Ni-Zr系统中的膜。已经研究了所得薄膜的形态和结构,作为衬底温度的函数在25-350℃的范围内。通过涂覆发生率和θ - 2θX射线衍射,透射电子衍射和成像进行了形态学和结构修改。通过电子探针微分析分析了化学成分。已经通过次级中性质谱研究了组合物的深度变化。该研究导致测定最佳的增长温度,从而产生最近在Ti-Ni-ZR三元体系中发现的已知的喹啉阶段。

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