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Potentiodynamic behavior of the boron-doped diamond electrodes in Na_2SO_4 with pH 1 to 12

机译:硼掺杂金刚石电极的电位动力学行为,pH 1至12的Na_2SO_4

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Diamond thin films, with different concentrations of boron (0 to 20000 ppm B/C) were grown over silicon substrates in a HFCVD furnace. Energy Recoil Detection Analysis (ERDA) measurements revealed both an increase of boron and oxygen atoms in the film with the increase of the dopant concentration. Presence of tungsten carbide in all grown films was detected by syncroton XRD analysis. The potentiodynamic E/I measurements in 1 M Na_2SO_4 with different pH ranging from 1 to 12 revealed that the onset of the OER is shifted to less positive potentials as the solution is made more alkaline. The increase of the concentration of the dopant increased the current related with the reactions associated with the OER. Anodic polarizations decreased the electrode activity while cathodic polarizations could restore the surface activity for both HER and OER.
机译:金刚石薄膜,具有不同浓度的硼(0至20000ppm B / C)在HFCVD炉中的硅基衬底上生长。能量反冲检测分析(ERDA)测量显示薄膜中硼和氧原子的增加随着掺杂剂浓度的增加。通过Syncroton XRD分析检测所有生长薄膜中碳化钨的存在。在1MNA_2SO_4中测量的电位动力学E / I测量从1到12的不同,显示伊尔的开始越差,因为溶液制成更多碱性。掺杂剂浓度的增加增加了与与oer相关的反应相关的电流。阳极偏振偏振减少电极活性,而阴极偏振可以恢复她和伊尔的表面活性。

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