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A NEW APPROACH FOR CMOS FABRICATION OF MICROCANTILEVER/NANOTIP SYSTEMS FOR PROBE-STORAGE APPLICATIONS

机译:用于探头储存应用的微电机/纳米坡系系统的CMOS制造的一种新方法

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A novel method for fabricating the mechanical part of the "Millipede", a MEMS-based scanning-probe data storage system, is reported. The proposed approach exploits a selective p-to-n HF-based electropolishing step, which allows to remove p-type silicon, used as a sacrificial layer, while leaving n-type silicon, exploited as structural material, un-etched. The approach is CMOS compatible, thus allowing to integrate both the mechanical and electronic part of the "Millipede" on the same chip. Experimental results, carried out on chips fabricated using the BCD6 process of ST Microelectronics, demonstrate the feasibility of fabricating free-standing w-type silicon cantilevers by selective etching of the p-type substrate.
机译:报道了一种用于制造“毫桩”的机械部分的新方法,是一种基于MEMS的扫描探针数据存储系统。所提出的方法利用基于选择性的p-to-n HF的电解抛光步骤,其允许去除用作牺牲层的P型硅,同时留下n型硅,被利用为结构材料,不蚀刻。该方法是CMOS兼容的,因此允许在同一芯片上集成“毫升”的机械和电子部分。在使用ST微电子的BCD6过程制造的芯片上进行的实验结果,证明了通过选择性蚀刻p型衬底来制造独立式W型硅膨胀器的可行性。

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