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Electrical characterization of BGA test socket for high-speed applications

机译:高速应用BGA测试插座的电气表征

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This paper discusses the electrical characterization of a high-density and high-speed BGA (Ball Grid Array) socket. The socket is built from copper-clad pogo pin and pinned in a 32 x 32mm array with 400 pins on a 1.27-mm pitch. It provides power/ground array, and signal pins designed to offer 348 signal lines. The socket-based dielectric has a dielectric constant of about 4.2. Since the BGA test socket discussed in the paper is being targeted for high-speed testing fixture applications and their pins are closely spaced. Extensive TDR (Time Domain Reflectometry) measurements and IPAS 10 simulations have been used to extract their significant electrical properties such as differential skews, characteristic impedances, reflection characteristics, and crosstalk. The bandwidth of the BOA socket from the 3 dB return loss criteria was calculated to be around 5 GHz for time domain measurements.
机译:本文讨论了高密度和高速BGA(球栅阵列)插座的电气表征。插座采用铜包Pogo引脚构建,并在1.27毫米间距上用400销固定在32 x 32mm阵列中。它提供电源/接地阵列,并设计为提供348个信号线的信号引脚。基于插座的电介质具有约4.2的介电常数。由于本文中讨论的BGA测试插座是针对高速测试夹具应用的,并且其销紧密间隔。广泛的TDR(时域反射区)测量和IPAS 10模拟已经用于提取其显着的电性能,例如差分偏差,特征阻抗,反射特性和串扰。从3个DB回波损耗标准的BOA插座的带宽计算为时间域测量值约为5 GHz。

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