首页> 外文会议>Workshop on Nanoscience nanotechnology : Nanostructured materials application and innovation transfer >MAGNETORESISTIVE PROPERTIES OF MAGNETRON SPUTTERED La_(0.7)Sr_(0.3)MnO_3 THIN FILMS
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MAGNETORESISTIVE PROPERTIES OF MAGNETRON SPUTTERED La_(0.7)Sr_(0.3)MnO_3 THIN FILMS

机译:磁控溅射LA_(0.7)SR_(0.3)MNO_3薄膜的磁阻性能

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La_(0.7)Sr_(0.3)MnO_3 (LSMO) films of variable thickness were deposited by magnetron sputtering on LaAlO_3 (100) substrate. The substrate ― film lattice mismatch causes changes in the microstructure and magnetoresistance. The substrate ― film lattice mismatch is compensated by large stress in LSMO layer at interface. With increasing of the film thickness this stress relaxes and upper film layer exhibits bulk value lattice parameters. Due to variable strain appeared in thin LSMO films different mag-netoresistive behaviour has been found. The sample with lowest thickness of 10 nm showed semiconducting behaviour. Epitaxial LSMO films of thickness 20 nm < d < 215 nm exhibit high Curie temperature up to Tc ~ 365 K and colossal magnetoresistance behaviour. High stressed film with metal ― insulator transition ~160 K showed both high negative magnetoresistance at T = 150 K and striking high positive magnetoresistance at T < 50 K.
机译:通过LaALO_3(100)衬底上的磁控溅射沉积可变厚度的LA_(0.7)SR_(0.3)MNO_3(LSMO)薄膜。基材 - 薄膜晶格失配导致微结构和磁阻的变化。基板 - 薄膜晶格错配通过在界面处的LSMO层中的大应力来补偿。随着膜厚度的增加,这种应力松弛,上膜层具有散装值晶格参数。由于在薄的LSMO薄膜中出现的可变应变,已经发现了不同的磁性Netistive行为。最低厚度为10nm的样品显示出半导体行为。外延LSMO薄膜厚度20nm

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