Reactive-Atom Plasma (RAP) processing, is a new deterministic, non-contact material removal tool that may speed the time of manufacturing of a wide range of optical and semiconductor devices. A first generation prototype has demonstrated the feasibility of the process and is able to shape and polish silica glass 10-10,000 times faster than existing technologies without causing any surface or sub-surface damage to the material. Silicon and silicon carbide (SiC) have been tested and can also be etched and polished using this process. Using other plasma chemistries it may be possible to etch and polish a wide variety of materials including sapphire and other oxides as well as a number of metals. The process is highly controllable, reproducible, uses low-cost consumables, and produces easily-scrubbed gaseous waste products. Unlike other plasma and ionbased etching methods, the RAP process operates at atmospheric pressure. Under some conditions RAP can produce near atomic smoothness on surfaces in minutes.
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