Monitoring and Influence of Trace Gaseous Impurity in Atmospheric Pressure Rapid Thermal Silicidation Process

摘要

The residual impurity gases in the atmospheric pressure processing equipment are becoming an important factor in sub-micron ULSI industry. The present paper presents some interesting results in this field, including: (1) Dynamic investigation of trace gaseous impurity dependence on purging gas flow rate and other parameters in various rapid thermal processing (RTP) chambers by using mass spectrometer and O{sub}2 sensor real time monitoring; (2) Ti coated wafer for monitoring of trace O{sub}2; and, (3) Applications of Auger Electron Spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) automated thermal desorption and gas chromatography-mass spectroscopy (ATD-GCMS) to characterize the trace impurity effect.