Investigation of the deposition mechanism of trace Cu impurities from ultra pure water on Si wafer surfaces with synchrotron radiation techniques

摘要

In this work, we will investigate the spontaneous deposition mechanism of Cu trace impurities in ultra pure water on Si (100) wafers. The Cu concentration ranges from 10 ppt to 500 ppb in ultra pure water. We will focus on the correlation between the deposited Cu concentration and the amount of dissolved oxygen present in the ultra pure water.