While applying the ultraviolet ray to the production mannered null semiconductor wafer surface of the semiconductor wafer which does not have impurity Cu in precipitation manner of the impurity metal in the bulk of the semiconductor wafer,

摘要

PROBLEM TO BE SOLVED: To provide a method of depositing a dopant metal in bulk of semiconductor wafer where the dopant metal in the bulk of the semiconductor wafer is efficiently deposited on a surface thereof.;SOLUTION: The method deposits the dopant metal in the bulk of semiconductor wafer where heating is started from a backside of the semiconductor wafer W3 by a hot plate 1 irradiating ultraviolet rays onto the surface of the semiconductor wafer W3 by a ultraviolet irradiation lamp 2, and then the dopant metal Cu in the bulk of the semiconductor wafer W3 is deposited.;COPYRIGHT: (C)2009,JPO&INPIT