Simulation of the misfit elastic stress induced by implanted impurities in semiconductor wafers

摘要

The impurity redistribution profile after the subsequent thermal annealing necessary to regrow the silicon crystalline implanted layer is deduced in an analytical way. Simplified forms of the redistribution profiles are derived as a function of an effective diffusion length, for small and large redistribution processes respectively. The obtained relations permit one to deduce an explicit expression or the misfit elastic stress induced by the dopant impurities in semiconductor wafers. A particular example regarding the distribution of the misfit stress induced by boron in silicon wafers is discussed.