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200 A/cm/sup 2/ Threshold Current Density 1.5/spl mu/m Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd

机译：200 A / CM / SUP 2 /阈值电流密度1.5 / SPL MU / M GAINAS / AIGAINAS应变层GRIN-SCH量子孔激光二极管由OMCVD种植

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来源
《Annual Device Research Conference》|2001年||共14页
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作者
Kasukawa A.; Bhat R.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. 200-A/cm/sup 2/ threshold current density 1.5- mu m GaInAs/AlGaInAs strained-layer GRIN-SCH quantum-well laser diodes grown by OMCVD [J] . Kasukawa A., Bhat R. IEEE Transactions on Electron Devices . 1991,第12期

机译：200-A / cm / sup 2 /阈值电流密度1.5-μm通过OMCVD生长的GaInAs / AlGaInAs应变层GRIN-SCH量子阱激光二极管
2. Low-threshold-current, high-quantum-efficiency 1.5 mu m GaInAs-GaInAsP GRIN-SCH single quantum well laser diodes [J] . Matsumoto N., Kasukawa A. IEEE Journal of Quantum Electronics . 1991,第6期

机译：低阈值电流，高量子效率1.5μmGaInAs-GaInAsP GRIN-SCH单量子阱激光二极管
3. Very low threshold 1.5 mu m GaInAs/AlGaInAs BH GRINSCH strained-layer quantum well laser diodes grown by MOCVD [J] . Kasukawa A., Bhat R. Electronics Letters . 1991,第18期

机译：通过MOCVD生长的极低阈值1.5μmGaInAs / AlGaInAs BH GRINSCH应变层量子阱激光二极管
4. 200 A/cm/sup 2/ Threshold Current Density 1.5/spl mu/m Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd [C] . Kasukawa, A., Bhat, . 2001

机译：200 A / cm / sup 2 /阈值电流密度1.5 / spl mu / m Gainas / aigainas Omcvd生长的应变层Grin-sch量子阱激光二极管
5. 1.5μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon [O] . Si Zhu, Bei Shi, Qiang Li, 2018

机译：1.5μm量子点二极管激光直接在CMOS标准（001）硅上生长
6. Calculated Room-Temperature Threshold Current Densities for the Visible II-VIZnCdSe/ZnSe Quantum-Well Diode Lasers. (Reannouncement with New Availability Information) [R] . Aggarwal, R. L., Zayhowski, J. J., Lax, B. 1993

机译：计算可见II-VIZnCdse / Znse量子阱二极管激光器的室温阈值电流密度。（重新公布新的可用性信息）

200 A/cm/sup 2/ Threshold Current Density 1.5/spl mu/m Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd

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