I/V characteristics of ZnSe Schottky diodes

摘要

The ZnSe sample used to make the Schottky diode was grown using conventional thermal diffusion technique with iodine as the transport agent, and indium was subsequently diffused into. While gold was used for the rectifying contact, indium was used for the ohmic contact. From the analysis of the I/V characteristic of the diodes, it had been concluded that the transport mechanism of the diodes was thermal emission with an ideality factor of 1.4 that shows the important influence of the interfacial layer on the performance of the diode. Limited tunneling nature of the diode was also observed due to the thin depletion layer by the heavy doping. From the general diode equation of I=I{sub}s.exp(V/V{sub}o), we found a relationship of ln(I{sub}s)∝(V{sub}) existed for the diodes.