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The discharge voltage behaviour during reactive sputtering of oxides

机译:氧化物反应溅射期间的放电电压特性

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The magnetron discharge voltage, measured in pure argon (or another noble gas) is characteristic for each kind of metallic targets. This discharge voltage is related to the Ion induced Secondary Electron Emission (ISEE) coefficient of the target material. In reactive sputtering a reaction gas is added to the sputter gas so that compounds (oxides, nitrides, carbides…) can be grown on a substrate. However, this reaction gas is also interacting with the target material forming also oxides, nitrides etc. In this paper we will limit ourselves to the situation in which the reaction gas is oxygen yielding oxides as well on the substrate as on the target surface. These oxides, formed on the target have a profound influence on the behaviour of the discharge voltage. Indeed, the higher the amount of oxygen added to the sputter gas (in this case only argon was used) the more oxide will be formed on the target surface and in the target subsurface region. In the limit, the target is fully plasma oxidised. This phenomenon gives rise to a change of the discharge voltage as a function of the oxygen flow, which is generally illustrated by the well known hysteresis experiments published in literature. As it is normally assumed that the ISEE of oxides is higher than the ISEE of the corresponding pure metallic targets, one expects a decrease of the discharge voltage upon the addition of oxygen to the sputter gas. The discharge voltage was measured for 15 different metallic target materials at constant current before and after plasma oxidation. Plasma oxidation of the target surface was achieved by sputtering the target in pure oxygen. It turned out that only 5 out of 15 target materials behaved "normal" i.e. displaying a lower target voltage when sputtering reactively as compared to metallic mode sputtering without oxygen. Taking the Thornton relation into account, it is possible to establish a relation between the measured discharge voltage and published ISEE values for pure metals. Based on this relation a value for the ISEE coefficient of the oxidized target surface can be calculated. Two distinct groups can be discerned: for one group the ISEE coefficient of the oxidized target surface is larger than the ISEE coefficient of the metal, while the opposite behaviour is noticed for the second group. This difference seems to find its origin in the reduction behaviour of the oxides under ion bombardment, since the ISEE coefficient of the oxide can be related to the simulated degree of reduction of the oxide. It is shown that the ISEE coefficient of the reduced oxides decreases with increasing oxygen content in the target. This is confirmed experimentally by sputtering in pure argon reduced titanium oxide targets with a known composition.
机译:在纯氩(或其他贵气体)中测量的磁控传输电压是每种金属靶标的特征。该放电电压与离子诱导的靶材料的二次电子发射(ISEE)系数有关。在反应性溅射中,反应气体加入到溅射气体中,使得可以在基材上生长化合物(氧化物,氮化物,碳化物...)。然而,该反应气体也与形成氧化物,氮化物等的靶材料相互作用。在本文中,我们将自行限制反应气体在靶表面上的氧也是氧的情况。在目标上形成的这些氧化物对放电电压的行为产生深远的影响。实际上,加入溅射气体的氧气量越高(在这种情况下,使用氩气)将在靶表面和目标地下区域中形成越多的氧化物。在极限中,靶标是氧化的完全血浆。这种现象导致作为氧气流的函数的放电电压的变化,这通常由在文献中公布的众所周知的滞后实验说明。通常假设氧化物的ISEE高于相应纯金属靶的ISEE,因此预期在向溅射气体加入氧气时降低放电电压。在等离子体氧化之前和之后,在恒定电流下测量15种不同的金属靶材料的放电电压。通过在纯氧中溅射靶来实现靶表面的血浆氧化。事实证明,只有15个目标材料中的5个表现为“正常”即,与没有氧气的金属模式溅射相比,在反应地溅射时显示较低的目标电压。考虑到Thornton关系,可以在测量的放电电压和发表的纯金属的出版物值之间建立关系。基于该关系,可以计算氧化目标表面的ISEE系数的值。可以辨别出两个不同的基团:对于一个组,氧化靶表面的ISEE系数大于金属的ISEE系数,而第二组被注意到相反的行为。这种差异似乎在离子轰击下的氧化物的还原行为中找到了它的起源,因为氧化物的ISEE系数可以与氧化物的模拟的氧化物的模拟程度有关。结果表明,随着靶标中的氧含量增加,降低氧化物的ISEE系数降低。通过用已知组合物在纯氩的氧化钛靶标中通过溅射来实验证实。

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