Secondary Electron Image Profiles Using Bias Voltage Technique In Deep Contact Hole

摘要

Charging effects on secondary electron (SE) profiles with bias voltage in deep contact holes are investigated. We show first in detail the SE beam profiles for operating conditions such as scanning time, current and landing energy, the brightness of the bottom of the contact hole depends on the charge of SE yield with incident energy. We conclude that we can enhance the contrast of the beam profile by optimizing the applied bias voltage.