For the purpose of improvement in resolution of force gradient and mass detection in atomic force microscope (AFM), we are developing cantilevers measuring from 100 rim to several microns. We succeeded in fabrication of single crystal Si cantilever with several microns size and measurement of its mechanical characteristics. Silicon-on-insulator (SOI) wafer is used for the fabrication. Fabrication is based on three anisotropic etching by KOR and two local oxidation processes of Si. Without depending on precision of lithography technique, triangular shaped cantilevers measuring several microns with tetrahedral tips on their ends are fabricated with high uniformity. The thickness of the cantilever is chosen from 20 nm to 120 nm. Typical spring constant, resonance frequency and Q factors of the single-crystal Si cantilevers are several N/m, 1 to 10 MHz and around 10{sup}4 in vacuum, respectively. The density of the cantilever is up to 10, 000 cantilevers/mm{sup}2. We aim to scan an area of up to a few mm{sup}2 simultaneously with this multi-probe cantilever array.
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