Low temperature preparation of sol-gel PZT thin film annealed at 160/spl deg/C by hydrothermal method

摘要

Pb(Zr/sub 0.52/TiO/sub 0.48/)O/sub 3/ (PZT) thin films have been deposited on Pt/Ti/SiO/sub 2//Si substrate by sol-gel method with pre-baking at 300/spl deg/C, and then successfully crystallized at low temperature of 160/spl deg/C by hydrothermal annealing in mixture solution of KOH and Pb(OH)/sub 2/. Hydrothermally-annealed PZT films show good crystallinity with pure perovskite phase and are oriented to [111]. The surface and cross section observed by SEM show granulated structure of grain size of about 100 nm. The electric properties of the samples before post-baking and after post-baking were measured. The sample after post-baking shows good hysteresis loop with Pr=26.3 /spl mu/m/cm/sup 2/ and E/sub c/=40.1 kV/cm.