首页> 外文会议>IEEE International Symposium on Applications of Ferroelectrics >0.5SrTiO/sub 3/-0.5PbTiO/sub 3/ thin films by rf-sputtering on Pt/TiN/sub x/, RuO/TiN/sub x/ and TiN/sub x/ electrodes
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0.5SrTiO/sub 3/-0.5PbTiO/sub 3/ thin films by rf-sputtering on Pt/TiN/sub x/, RuO/TiN/sub x/ and TiN/sub x/ electrodes

机译:0.5SRTIO / SUB 3 / -0.5PBTIO /亚3 /薄膜通过RF溅射在PT / TIN / SUB X /,RUO / TIN / SUB X /和TIN / SUB X /电极上

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A novel ferroelectric thin film system denoted by xSrTiO/sub 3/-(1-x)PbTiO/sub 3/ (SPT) is studied. In this work we report results on the composition 0.5SrTiO/sub 3/-0.5PbTiO/sub 3/ (SPT5) only. For this investigation, SPT5 thin films were deposited at different temperatures (500, 550, 600 and 650/spl deg/C) by argon/oxygen ion rf sputtering on Pt/TiN/sub x//SiO/sub 2//Si, RuO/sub x//TiN/sub x//SiO/sub 2//Si and TiN/sub x//SiO/sub 2//Si substrates at different relative concentrations of argon and oxygen (Ar/O = 100/0, 50/50, 0/100). The polycrystalline xSrTiO/sub 3/-(1-x)PbTiO/sub 3/ perovskite phase formation is confirmed by x-ray diffraction (XRD) analysis and the growth dynamics is studied by scanning electron microscopy (SEM). The nature of the SPT5 layer-electrode interface is also analyzed by this technique. The microstructural features of the SPT5 thin films on Pt/TiN/sub x//SiO/sub 2//Si, RuO/sub x//TiN/sub x//SiO/sub 2//Si and TiN/sub x//SiO/sub 2//Si substrates obtained by SEM were correlated to the deposit conditions.
机译:研究了由XSRTIO / Sub 3 / - (1-x)PBTIO / Sub 3 /(SPT)表示的新型铁电薄膜系统。在这项工作中,我们仅在组合物0.5srtio / sub 3 / -0.5pbtio / sub 3 /(spt5)上报告结果。对于本研究中,SPT5薄膜在不同温度下(500,550,600和650 / SPL度/ C)在Pt /锡氩/氧离子RF溅射/子X的SiO // /子2 //硅沉积, Ruo / sub x // tiN / sub x // sio / sub 2 // si和锡/亚x // sio / sub 2 // si衬底以不同的相对浓度的氩气和氧气(Ar / o = 100/0 ,50/50,0/100)。通过X射线衍射(XRD)分析确认多晶XSRTIO /亚3 / - (1-X)PBTIO /亚3 /钙钛矿相形成,通过扫描电子显微镜(SEM)研究生长动力学。通过该技术分析了SPT5层电极界面的性质。 Pt /锡/ x / sio / sub 2 // si,Ruo / sub x // tin / sub x // sio / sub 2 // si和tin / sub x / pt5薄膜的微观结构特征/ SiO / sub 2 //通过SEM获得的Si底物与沉积条件相关。

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