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Epitaxial growth of tungsten bronze (Sr,Ba)Nb/sub 2/O/sub 6/ thin films by chemical solution deposition

机译:通过化学溶液沉积,钨青铜(SR,BA)Nb / Sub 2 / O / Sup 6 /薄膜的外延生长

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Epitaxial growth feature of ferroelectric Sr/sub 0.5/Ba/sub 0.5/Nb/sub 2/O/sub 6/ (SBN) thin films synthesized by chemical solution deposition was investigated by enhanced XRD analyses. SBN thin films on MgO [100] crystallized to a mixture of end members SrNb/sub 2/O/sub 6/ and BaNb/sub 2/O/sub 6/ at 700/spl deg/C (heating rate: 10/spl deg/C). The sintering at over 1000/spl deg/C (heating rate: 10/spl deg/C) or at 700/spl deg/C (heating rate: 1/spl deg/C) was necessary in order to obtain the tetragonal tungsten bronze phase SBN. Two crystal lattice planes of [001]- and [310]-oriented SBN were intergrown an orientation of /spl plusmn/18.5/spl deg/ and 0/spl deg/ (90/spl deg/), respectively.
机译:通过增强的XRD分析研究了通过化学溶液沉积合成的铁电SR /亚0.5 / su / sup0.5 / Nb / sub 2 / sub 6 /(Sbn)薄膜的外延生长特征。 MgO [100]上的SBN薄膜结晶到末端构件SRNB / SUB 2 / SU / SUP 6 / AN和BANB / SUP 2 / O / SUB 6 / AT 700 / SPL DEG / C的混合物(加热速率:10 / SPL deg / c)。烧结超过1000 / SPL DEG / C(加热速率:10 / SPL DEG / C)或700 / SPL DEG / C(加热速率:1 / SPL DEG / C),以获得四边形钨青铜器阶段SBN。 [001] - 和[310] - oriented的SBN的两个晶格平面分别对/ SPL PLUSMN / 18.5 / SPLDEG / AND 0 / SPL DEG /(90 / SPL DEG /)的取向。

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