Switching properties of the Pb/sub 0.9/La/sub 0.1/TiO/sub 3/ thin film

摘要

Switching properties of the Pb/sub 0.9/La/sub 0.1/TiO/sub 3/ thin film have been measured. As the external input pulse voltage increases from 2 to 5 V, the switching time decreases from 0.49 to 0.12 /spl mu/s. The activation energy (E/sub a/) is obtained as 209 kV/cm from the relation between the switching time and the applied pulse voltage. The switched charge densities at 5 V obtained from the hysteresis loop and the polarization switching are 11.69 and 13.02 /spl mu/C/cm/sup 2/, respectively, which agree relatively well with each other and show a difference of 10%. As the top electrode area increases from 3.14/spl times/10/sup -4/ to 5.03/spl times/10/sup -3/ cm/sup -2/, the switching time increases from 0.12 to 1.88 /spl mu/s. As the load resistance increases from 50 /spl Omega/ to 33 k/spl Omega/, the switching time increases from 0.12 /spl mu/s to 9.7 /spl mu/s. These switching characteristics indicate that Pb/sub 0.9/La/sub 0.1/TiO/sub 3/ thin film can be well applied in nonvolatile memory devices.