Heteroepitaxial Pb_(0.9)Sr_(0.1)TiO_3/Bi_(0.9)La_(0.1)FeO_3/Pb_(0.9)Sr_(0.1)TiO_3 multiferroic structure: an effective way to improve the electrical, ferroelectric and magnetic performance

摘要

A ferroelectric/multiferroic structure composed of (Pb_(0.9)Sr_(0.1))TiO_3 (PST) and (Bi_(0.9)La_(0.4))FeO_3 (BLF) was heteroepitaxially deposited on a LaNiO_3 buffered (001) SrTiO_3 substrate by pulse laser deposition. Interestingly, the PST layer was acting as a buffering layer between BLF and electrode to suppress the migration of free carries in the heterostructure. A well-grown crystalline dense structure was observed from the surface morphology of PST/BLF/PST heterostructure. Moreover, the PST/BLF/ PST trilayer exhibited improved ferroelectric and dielectric behaviors, together with two orders of magnitude lower leakage current and higher dielectric constant. Our result indicate that the multiferroic PST/BLF/PST heterostructure may have a promising application for the future high-density memory.