Novel thin-film Silicon-on-Insulator (SOI) high-voltage devices permit the distinction of two different carrier-generation mechanisms. This paper will present evidence for both effects and give a first quantitative characterization. Both phenomena are expected to have different lifetime degradation signatures on the device, therefore a fundamental understanding is needed for reliability prediction. Either effect is expected to degrade high-voltage devices by hot-carrier injection into oxides, the former in the switching transition (carrier multiplication, both current and voltage present over the device), and the latter in the off-state of the device (spontaneous generation).
展开▼
